Temperature Dependence of the Excitonic Energy Band Gap in In(Ga)As Nanostructures

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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  • Author: Kopylov, Oleksii

    Korea Inst Sci & Technol, Nanphoton Res Ctr, Seoul 136791, South Korea

  • Author: Lee, Jungil, Korea, Republic of

    Nanphotonics Research Center, Korea Institute of Science and Technology, Korea, Republic of

  • Author: Han, Ilki, Korea, Republic of

    Nanphotonics Research Center, Korea Institute of Science and Technology, Korea, Republic of

  • Author: Choi, Won Jun, Korea, Republic of

    Nanphotonics Research Center, Korea Institute of Science and Technology, Korea, Republic of

  • Author: Song, Jin Dong, Korea, Republic of

    Nanphotonics Research Center, Korea Institute of Science and Technology, Korea, Republic of

  • Author: Yeo, Ina, France

    Institut Néel, Centre National de la Recherche Scientifique, Université Joseph Fourier, France

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We analyzed the temperature-dependent variation of the peak energies in the photoluminescence of InAs/GaAs quantum dots and InAs/In0.2Ga0.8As/GaAs quantum dots in an asymmetric well. The InAs dots were grown by using migration-enhanced molecular beam epitaxy. The peak emission energies decreased monotonously with increasing temperature over the range of measurements from 13 K to 225 K. The temperature dependence of the peak energy was successfully fitted with two analytic models, namely, the phenomenological Varshni equation and the semi-empirical Fan equation based on electron-phonon statistics, respectively. The physical meaning of the Varshni coefficients is discussed in terms of the phonon energy and the strain in the nanostructures.
Original languageEnglish
JournalKorean Physical Society. Journal
Publication date2012
Volume60
Journal number10
Pages1828-1832
ISSN0374-4884
DOIs
StatePublished
CitationsWeb of Science® Times Cited: 0
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