Surface Disordered Ge–Si Core–Shell Nanowires as Efficient Thermoelectric Materials

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Surface Disordered Ge–Si Core–Shell Nanowires as Efficient Thermoelectric Materials. / Markussen, Troels.

In: Nano Letters, 2012.

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Markussen, Troels / Surface Disordered Ge–Si Core–Shell Nanowires as Efficient Thermoelectric Materials.

In: Nano Letters, 2012.

Publication: Research - peer-reviewJournal article – Annual report year: 2012

Bibtex

@article{368991a57e634e2bb6c84919fbdc88f0,
title = "Surface Disordered Ge–Si Core–Shell Nanowires as Efficient Thermoelectric Materials",
keywords = "GeSi core−shell nanowires, Transport, Thermoelectrics",
publisher = "American Chemical Society",
author = "Troels Markussen",
year = "2012",
doi = "10.1021/nl302061f",
journal = "Nano Letters",
issn = "1530-6984",

}

RIS

TY - JOUR

T1 - Surface Disordered Ge–Si Core–Shell Nanowires as Efficient Thermoelectric Materials

A1 - Markussen,Troels

AU - Markussen,Troels

PB - American Chemical Society

PY - 2012

Y1 - 2012

N2 - Ge–Si core–shell nanowires with surface disorder are shown to be very promising candidates for thermoelectric applications. In atomistic calculations we find that surface roughness decreases the phonon thermal conductance significantly. On the contrary, the hole states are confined to the Ge core and are thereby shielded from the surface disorder, resulting in large electronic conductance values even in the presence of surface disorder. This decoupling of the electronic and phonon transport is very favorable for thermoelectric purposes, giving rise to promising room temperature figure of merits ZT > 2. It is also found that the Ge–Si core–shell wires perform better than pure Si nanowires.

AB - Ge–Si core–shell nanowires with surface disorder are shown to be very promising candidates for thermoelectric applications. In atomistic calculations we find that surface roughness decreases the phonon thermal conductance significantly. On the contrary, the hole states are confined to the Ge core and are thereby shielded from the surface disorder, resulting in large electronic conductance values even in the presence of surface disorder. This decoupling of the electronic and phonon transport is very favorable for thermoelectric purposes, giving rise to promising room temperature figure of merits ZT > 2. It is also found that the Ge–Si core–shell wires perform better than pure Si nanowires.

KW - GeSi core−shell nanowires

KW - Transport

KW - Thermoelectrics

U2 - 10.1021/nl302061f

DO - 10.1021/nl302061f

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

ER -