Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d

Publication: Research - peer-review › Journal article – Annual report year: 2012

Standard

Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d. / Kant, K. Mohan ; Esposito, Vincenzo ; Pryds, Nini.

In: Applied Physics Letters, Vol. 100, 2012, p. 033105.

Publication: Research - peer-review › Journal article – Annual report year: 2012

In: Applied Physics Letters, Vol. 100, 2012, p. 033105.

Publication: Research - peer-review › Journal article – Annual report year: 2012

Bibtex

@article{02f25d34f0454d848f4d42920f2068c9,

title = "Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d",

publisher = "American Institute of Physics",

author = "Kant, {K. Mohan} and Vincenzo Esposito and Nini Pryds",

note = "Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "2012",

volume = "100",

pages = "033105",

journal = "Applied Physics Letters",

issn = "0003-6951",

}

RIS

TY - JOUR

T1 - Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d

A1 - Kant,K. Mohan

A1 - Esposito,Vincenzo

A1 - Pryds,Nini

AU - Kant,K. Mohan

AU - Esposito,Vincenzo

AU - Pryds,Nini

PB - American Institute of Physics

PY - 2012

Y1 - 2012

N2 - Strained epitaxial Ce0.9Gd0.1O2d (CGO) thin films are deposited on MgO(001) substrates with SrTiO3 (STO) buffer layers. The strain in CGO epitaxial thin films is induced and controlled by varying the thickness of STO buffer layers. The induced strain is found to significantly enhance the in-plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity.

AB - Strained epitaxial Ce0.9Gd0.1O2d (CGO) thin films are deposited on MgO(001) substrates with SrTiO3 (STO) buffer layers. The strain in CGO epitaxial thin films is induced and controlled by varying the thickness of STO buffer layers. The induced strain is found to significantly enhance the in-plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity.

U2 - 10.1063/1.3676659

DO - 10.1063/1.3676659

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

VL - 100

SP - 033105

ER -