Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Strained epitaxial Ce0.9Gd0.1O2d (CGO) thin films are deposited on MgO(001) substrates with SrTiO3 (STO) buffer layers. The strain in CGO epitaxial thin films is induced and controlled by varying the thickness of STO buffer layers. The induced strain is found to significantly enhance the in-plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity.
Original languageEnglish
JournalApplied Physics Letters
Publication date2012
Volume100
Pages033105
ISSN0003-6951
DOIs
StatePublished

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Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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