Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction

Publication: Research - peer-reviewJournal article – Annual report year: 2010

Without internal affiliation

  • Author: Mariager, Simon O.

    University of Copenhagen

  • Author: Lauridsen, Søren L.

    University of Copenhagen

  • Author: Sørensen, Claus B

    University of Copenhagen

  • Author: Dohn, Asmus Ougaard

    University of Copenhagen

  • Author: Willmott, Phillip R

    Paul Scherrer Institute

  • Author: Nygård, Jesper

    University of Copenhagen

  • Author: Feidenhans'l, Robert

    University of Copenhagen

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GaAs nanowires were grown by molecular beam epitaxy and studied by glancing-angle x-ray diffraction during five different stages of the growth process. An entire forest of randomly positioned epitaxial nanowires was sampled simultaneously and a large variation in the Au–Ga catalyst was found. Au, AuGa, AuGa2 and the hexagonal β phase were all identified in several orientations and in similar amounts. The nanowires are shown to consist of regular zinc blende crystal, its twin and the hexagonal wurtzite. The evolution of the various Au–Ga catalysts and the development in the twin to the wurtzite abundance ratio indicate that the Au catalyst is saturated upon initiation of growth leading to an increased amount of wurtzite structure in the wires. A specular x-ray scan identifies the various Au–Ga alloys, three Au lattice constants and a rough interface between nanowires and catalyst. Reciprocal space maps were obtained around Au Bragg points and show the development of the Au catalyst from a distribution largely oriented with respect to the lattice to a non-uniform distribution with several well-defined lattice constants.

Original languageEnglish
JournalNanotechnology
Publication date2010
Volume21
Issue11
Pages115603
ISSN09574484
DOIs
StatePublished
CitationsWeb of Science® Times Cited: 4
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