Sputtering of cryogenic films of hydrogen by keV ions: Thickness dependence and surface morphology

Publication: Research - peer-reviewConference article – Annual report year: 2009

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Sputtering of cryogenic films of hydrogen by keV ions : Thickness dependence and surface morphology. / Schou, Jørgen; Hilleret, Noel.

In: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 267, No. 16, 2009, p. 2748-2751.

Publication: Research - peer-reviewConference article – Annual report year: 2009

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Author

Schou, Jørgen; Hilleret, Noel / Sputtering of cryogenic films of hydrogen by keV ions : Thickness dependence and surface morphology.

In: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 267, No. 16, 2009, p. 2748-2751.

Publication: Research - peer-reviewConference article – Annual report year: 2009

Bibtex

@article{48440c1078954267aba3b669af51e269,
title = "Sputtering of cryogenic films of hydrogen by keV ions: Thickness dependence and surface morphology",
keywords = ", Sputtering, Solid hydrogen, Low temperature, Growth of films",
publisher = "Elsevier BV",
author = "Jørgen Schou and Noel Hilleret",
year = "2009",
doi = "10.1016/j.nimb.2009.05.024",
volume = "267",
number = "16",
pages = "2748--2751",
journal = "Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",

}

RIS

TY - CONF

T1 - Sputtering of cryogenic films of hydrogen by keV ions

T2 - Thickness dependence and surface morphology

A1 - Schou,Jørgen

A1 - Hilleret,Noel

AU - Schou,Jørgen

AU - Hilleret,Noel

PB - Elsevier BV

PY - 2009

Y1 - 2009

N2 - The sputtering yield induced by keV hydrogen ions measured at CERN and at Risø National Laboratory for solid H2 and D2 at temperatures below 4.2 K decreases with increasing film thickness from about 100 x 10(15)molecules/cm2. For a film thickness comparable to or larger than the ion range the data from Risø show a slight increase, whereas the yield from CERN continues to decrease up to very large film thicknesses, i.e. one order of magnitude larger than the ion range. The different behavior of the yield is discussed in terms of the probable growth modes of the films. The films produced at the Risø setup are quench-condensed films, while those produced at CERN are supposed to grow with large hydrogen aggregates on top of a thin bottom layer.

AB - The sputtering yield induced by keV hydrogen ions measured at CERN and at Risø National Laboratory for solid H2 and D2 at temperatures below 4.2 K decreases with increasing film thickness from about 100 x 10(15)molecules/cm2. For a film thickness comparable to or larger than the ion range the data from Risø show a slight increase, whereas the yield from CERN continues to decrease up to very large film thicknesses, i.e. one order of magnitude larger than the ion range. The different behavior of the yield is discussed in terms of the probable growth modes of the films. The films produced at the Risø setup are quench-condensed films, while those produced at CERN are supposed to grow with large hydrogen aggregates on top of a thin bottom layer.

KW - Sputtering

KW - Solid hydrogen

KW - Low temperature

KW - Growth of films

U2 - 10.1016/j.nimb.2009.05.024

DO - 10.1016/j.nimb.2009.05.024

JO - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 16

VL - 267

SP - 2748

EP - 2751

ER -