Sputtering of cryogenic films of hydrogen by keV ions : Thickness dependence and surface morphology
Publication: Research - peer-review › Conference article – Annual report year: 2009
The sputtering yield induced by keV hydrogen ions measured at CERN and at Risø National Laboratory for solid H2 and D2 at temperatures below 4.2 K decreases with increasing film thickness from about 100 x 10(15)molecules/cm2. For a film thickness comparable to or larger than the ion range the data from Risø show a slight increase, whereas the yield from CERN continues to decrease up to very large film
thicknesses, i.e. one order of magnitude larger than the ion range. The different behavior of the yield is
discussed in terms of the probable growth modes of the films. The films produced at the Risø setup are quench-condensed films, while those produced at CERN are supposed to grow with large hydrogen aggregates on top of a thin bottom layer.
| Original language | English |
|---|---|
| Journal | Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms |
| Publication date | 2009 |
| Volume | 267 |
| Journal number | 16 |
| Pages | 2748-2751 |
| ISSN | 0168-583X |
| DOIs | |
| State | Published |
Conference
| Conference | 23rd International Conference on Atomic Collisions in Solids |
|---|---|
| Number | 23 |
| Country | South Africa |
| City | Phalaborwa |
| Period | 17-08-08 → 22-08-08 |
| Citations | Web of Science® Times Cited: 0 |
|---|
Keywords
- Sputtering, Solid hydrogen, Low temperature, Growth of films
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