Sputtering of cryogenic films of hydrogen by keV ions: Thickness dependence and surface morphology

Publication: Research - peer-reviewConference article – Annual report year: 2009

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The sputtering yield induced by keV hydrogen ions measured at CERN and at Risø National Laboratory for solid H2 and D2 at temperatures below 4.2 K decreases with increasing film thickness from about 100 x 10(15)molecules/cm2. For a film thickness comparable to or larger than the ion range the data from Risø show a slight increase, whereas the yield from CERN continues to decrease up to very large film thicknesses, i.e. one order of magnitude larger than the ion range. The different behavior of the yield is discussed in terms of the probable growth modes of the films. The films produced at the Risø setup are quench-condensed films, while those produced at CERN are supposed to grow with large hydrogen aggregates on top of a thin bottom layer.
Original languageEnglish
JournalNuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Publication date2009
Volume267
Issue16
Pages2748-2751
ISSN0168-583X
DOIs
StatePublished

Conference

Conference23rd International Conference on Atomic Collisions in Solids
Number23
CountrySouth Africa
CityPhalaborwa
Period17/08/0822/08/08
CitationsWeb of Science® Times Cited: 0

Keywords

  • Sputtering, Solid hydrogen, Low temperature, Growth of films
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