Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts

Publication: Research - peer-reviewJournal article – Annual report year: 2001

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Ferromagnetic contacts on a high-mobility, two-dimensional electron gas (2DEG) in a narrow gap semiconductor with strong spin-orbit interaction are used to investigate spin-polarized electron transport. We demonstrate the use of magnetized contacts to preferentially inject and detect specific spin orientations. Spin dephasing and spin precession effects are studied by temperature and 2DEG channel length dependent measurements. Interdigital-ferromagnetic contacts suppress unwanted effects due to ferromagnetic microstrip inhomogeneities by averaging.
Original languageEnglish
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume63
Issue number12
Pages (from-to)125333
ISSN1098-0121
DOIs
StatePublished - 2001
Peer-reviewedYes

Bibliographical note

Copyright (2001) American Physical Society

CitationsWeb of Science® Times Cited: 140

Keywords

  • DEVICE, SEMICONDUCTOR INTERFACE, IN0.53GA0.47AS/IN0.52AL0.48AS HETEROSTRUCTURE, INJECTION, GATE CONTROL, ANISOTROPIC MAGNETORESISTANCE, ORBIT INTERACTION
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