Semiempirical model for nanoscale device simulations

Publication: Research - peer-reviewJournal article – Annual report year: 2010

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We present a semiempirical model for calculating electron transport in atomic-scale devices. The model is an extension of the extended Hückel method with a self-consistent Hartree potential that models the effect of an external bias and corresponding charge rearrangements in the device. It is also possible to include the effect of external gate potentials and continuum dielectric regions in the device. The model is used to study the electron transport through an organic molecule between gold surfaces, and it is demonstrated that the results are in closer agreement with experiments than ab initio approaches provide. In another example, we study the transition from tunneling to thermionic emission in a transistor structure based on graphene nanoribbons.
Original languageEnglish
JournalPhysical Review B (Condensed Matter and Materials Physics)
Issue number7
Pages (from-to)075420
StatePublished - 2010

Bibliographical note

Copyright 2010 American Physical Society

CitationsWeb of Science® Times Cited: 40
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ID: 4878752