Room-temperature dephasing in InAs/GaAs quantum dots

Research output: Research - peer-reviewArticle in proceedings – Annual report year: 1999

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Summary form only given. Semiconductor quantum dots (QDs) are receiving increasing attention for fundamental studies on zero-dimensional confinement and for device applications. Quantum-dot lasers are expected to show superior performances, like high material gain, low and temperature-independent threshold current and chirp-free operation, due to the delta-like density of states (DOS). We have measured the dephasing time at room temperature of InAs QDs embedded in a waveguide to estimate the lower limit for the energy-broadening of the DOS given by the homogeneous linewidth. The sample consists of 3 stacked layers of InAs-InGaAs-GaAs quantum dots.
Original languageEnglish
Title of host publicationProceedings of QELS'99
Number of pages46
Place of PublicationBaltimore
PublisherIEEE
Publication date1999
PagesQTuC2
ISBN (Print)1-55752-576-X
DOIs
StatePublished - 1999
Event1999 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States
Duration: 23 May 199926 May 1999
http://www.opticsinfobase.org/search.cfm?meetingid=19&year=1999

Conference

Conference1999 Quantum Electronics and Laser Science Conference
CountryUnited States
CityBaltimore, MD
Period23/05/199926/05/1999
Internet address

Bibliographical note

Copyright 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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