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In this work we describe the ultrafast excitation kinetics of biased quantum well, arising from the optically induced dynamical screening of a bias electric field. The initial bia electric field inside the quantum well is screened by the optically excited polarized electron-hole pairs. This leads to a dynamical modification of the properties of the system within an excitation pulse duration. We calculate the excitation kinetics of a biased quantum well and the dependency of resulting electronic and optical properties on the excitation pulse fluence, quantum well width,and initial bias field strength. Our calculations, in particular, predict the strongly nonlinear dependency of the effective optical absorption coefficient on the excitation pulse fluence, and ultrabroadband terahertz emission. Our theoretical model is free of fitting parameters. Calculations performed for internally biased InFaN/GaN quantum wells are in good agreement with our experimental observations [Turchinovich et al., Phys. Rev. B 68, 241307(R) (2003)], as well as in perfect compliance with qualitative considerations. ©2006 American Institute of Physics
Original languageEnglish
JournalJournal of Applied Physics
Volume99
Issue number1
Pages (from-to)013510
ISSN0021-8979
DOIs
StatePublished - 2006

Bibliographical note

Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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