Publication: Research - peer-review › Journal article – Annual report year: 2010
Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.
|Journal||Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures|
|State||Published - 2010|
|Citations||Web of Science® Times Cited: 10|