Reversible and irreversible temperature-induced changes in exchange-biased planar Hall effect bridge (PHEB) magnetic field sensors

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2012

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We investigate the changes of planar Hall effect bridge magnetic field sensors upon exposure to temperatures between 25° C and 90°C. From analyses of the sensor response vs. magnetic fields we extract the exchange bias field Hex, the uniaxial anisotropy field HK and the anisotropic magnetoresistance (AMR) of the exchange biased thin film at a given temperature and by comparing measurements carried out at elevated temperatures T with measurements carried out at 25° C after exposure to T, we can separate the reversible from the irreversible changes of the sensor. The results are not only relevant for sensor applications but also demonstrate the method as a useful tool for characterizing exchange-biased thin films.
Original languageEnglish
Title of host publicationTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo
Publication date2012
StatePublished - 2012
EventNanotech 2012 - Santa Clara, United States


ConferenceNanotech 2012
LocationSanta Clara Convention Center
CountryUnited States
CitySanta Clara


  • Anisotropy, Biosensors, Electric resistance, Exhibitions, Fabrication, Fluidics, Hall effect, Magnetic sensors, Magnetometers, Magnetoresistance, Thin films, Nanotechnology
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ID: 13019630