Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4%60.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
Original languageEnglish
JournalApplied Physics Letters
Publication date2011
Volume99
Issue26
Pages261911
ISSN0003-6951
DOIs
StatePublished

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Copyright 2011 American Institute of Physics.

CitationsWeb of Science® Times Cited: 15
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