Pulsed laser deposition growth of FeSb2 films for thermoelectric applications

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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Pulsed laser deposition growth of FeSb2 films for thermoelectric applications. / Sun, Ye; Canulescu, Stela; Sun, Peijie; Steglich, Frank; Pryds, Nini; Schou, Jørgen; Brummerstedt Iversen, Bo.

In: Materials Chemistry and Physics, Vol. 129, No. 1-2, 2011, p. 105-108.

Publication: Research - peer-reviewJournal article – Annual report year: 2011

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Sun, Ye; Canulescu, Stela; Sun, Peijie; Steglich, Frank; Pryds, Nini; Schou, Jørgen; Brummerstedt Iversen, Bo / Pulsed laser deposition growth of FeSb2 films for thermoelectric applications.

In: Materials Chemistry and Physics, Vol. 129, No. 1-2, 2011, p. 105-108.

Publication: Research - peer-reviewJournal article – Annual report year: 2011

Bibtex

@article{3330da43991c417a9410aafe4d343eaa,
title = "Pulsed laser deposition growth of FeSb2 films for thermoelectric applications",
keywords = "Solid Oxide Feul Cells",
publisher = "Elsevier S.A.",
author = "Ye Sun and Stela Canulescu and Peijie Sun and Frank Steglich and Nini Pryds and Jørgen Schou and {Brummerstedt Iversen}, Bo",
year = "2011",
doi = "10.1016/j.matchemphys.2011.03.079",
volume = "129",
number = "1-2",
pages = "105--108",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",

}

RIS

TY - JOUR

T1 - Pulsed laser deposition growth of FeSb2 films for thermoelectric applications

A1 - Sun,Ye

A1 - Canulescu,Stela

A1 - Sun,Peijie

A1 - Steglich,Frank

A1 - Pryds,Nini

A1 - Schou,Jørgen

A1 - Brummerstedt Iversen,Bo

AU - Sun,Ye

AU - Canulescu,Stela

AU - Sun,Peijie

AU - Steglich,Frank

AU - Pryds,Nini

AU - Schou,Jørgen

AU - Brummerstedt Iversen,Bo

PB - Elsevier S.A.

PY - 2011

Y1 - 2011

N2 - FeSb2 films were produced in a low-pressure Ar environment by pulsed laser deposition at 355 nm. The influence of growth parameters such as substrate temperature, Ar pressure and deposition time on the growth of FeSb2 films was studied. Nearly phase-pure FeSb2 films with thicknesses of 100–400 nm were produced at 425 °C with an Ar pressure of 1.5–2 Pa. Thermal transport and Hall measurements were performed to explore the thermoelectric transport properties of the FeSb2 films. A maximum thermopower of 120 μVK−1 at 40 K was obtained. In general it is highly important to understand the growth properties of FeSb2 films if they are to eventually reach thermoelectric applications at cryogenic temperatures.

AB - FeSb2 films were produced in a low-pressure Ar environment by pulsed laser deposition at 355 nm. The influence of growth parameters such as substrate temperature, Ar pressure and deposition time on the growth of FeSb2 films was studied. Nearly phase-pure FeSb2 films with thicknesses of 100–400 nm were produced at 425 °C with an Ar pressure of 1.5–2 Pa. Thermal transport and Hall measurements were performed to explore the thermoelectric transport properties of the FeSb2 films. A maximum thermopower of 120 μVK−1 at 40 K was obtained. In general it is highly important to understand the growth properties of FeSb2 films if they are to eventually reach thermoelectric applications at cryogenic temperatures.

KW - Solid Oxide Feul Cells

U2 - 10.1016/j.matchemphys.2011.03.079

DO - 10.1016/j.matchemphys.2011.03.079

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 1-2

VL - 129

SP - 105

EP - 108

ER -