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@article{fecf5bd4ed3945bc8ba4e6f7dd7431de,
title = "Photon absorption and photocurrent in solar cells below semiconductor bandgap due to electron photoemission from plasmonic nanoantennas",
publisher = "John/Wiley & Sons Ltd.",
author = "Andrey Novitsky and Alexander Uskov and Claudia Gritti and Protsenko, {I. E.} and Beata Kardynal and Andrei Lavrinenko",
year = "2014",
doi = "10.1002/pip.2278",
volume = "22",
number = "4",
pages = "422--426",
journal = "Progress in Photovoltaics",
issn = "1062-7995",

}

RIS

TY - JOUR

T1 - Photon absorption and photocurrent in solar cells below semiconductor bandgap due to electron photoemission from plasmonic nanoantennas

A1 - Novitsky,Andrey

A1 - Uskov,Alexander

A1 - Gritti,Claudia

A1 - Protsenko,I. E.

A1 - Kardynal,Beata

A1 - Lavrinenko,Andrei

AU - Novitsky,Andrey

AU - Uskov,Alexander

AU - Gritti,Claudia

AU - Protsenko,I. E.

AU - Kardynal,Beata

AU - Lavrinenko,Andrei

PB - John/Wiley & Sons Ltd.

PY - 2014

Y1 - 2014

N2 - We model the electron photoemission frommetal nanoparticles into a semiconductor in a Schottky diode with a conductive oxide electrode hosting the nanoparticles. We show that plasmonic effects in the nanoparticles lead to a substantial enhancement in photoemission compared with devices with continuous metal films. Optimally designed metal nanoparticles can provide an effectivemechanismfor the photon absorption in the infrared range below the semiconductor bandgap, resulting in the generation of a photocurrent in addition to the photocurrent from band-to-band absorption in a semiconductor. Such structure can form the dais of the development of plasmonic photoemission enhanced solar cells.

AB - We model the electron photoemission frommetal nanoparticles into a semiconductor in a Schottky diode with a conductive oxide electrode hosting the nanoparticles. We show that plasmonic effects in the nanoparticles lead to a substantial enhancement in photoemission compared with devices with continuous metal films. Optimally designed metal nanoparticles can provide an effectivemechanismfor the photon absorption in the infrared range below the semiconductor bandgap, resulting in the generation of a photocurrent in addition to the photocurrent from band-to-band absorption in a semiconductor. Such structure can form the dais of the development of plasmonic photoemission enhanced solar cells.

U2 - 10.1002/pip.2278

DO - 10.1002/pip.2278

JO - Progress in Photovoltaics

JF - Progress in Photovoltaics

SN - 1062-7995

IS - 4

VL - 22

SP - 422

EP - 426

ER -