Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

Publication: Research - peer-review › Journal article – Annual report year: 2012

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Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide. / Ou, Yiyu; Jokubavicius, Valdas ; Liu, Chuan ; Berg, Rolf W.; Linnarsson, Margareta ; Kamiyama, Satoshi ; Lu, Zhaoyue ; Yakimova, Rositza; Syväjärvi, Mikael; Ou, Haiyan.

In: Materials Science Forum, Vol. 717-720, 2012, p. 233-236.

Publication: Research - peer-review › Journal article – Annual report year: 2012

In: Materials Science Forum, Vol. 717-720, 2012, p. 233-236.

Publication: Research - peer-review › Journal article – Annual report year: 2012

Bibtex

@article{baacd26c86f842a5bc4b3ab935cace47,

title = "Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide",

publisher = "Trans Tech Publications Ltd.",

author = "Yiyu Ou and Valdas Jokubavicius and Chuan Liu and Berg, {Rolf W.} and Margareta Linnarsson and Satoshi Kamiyama and Zhaoyue Lu and Rositza Yakimova and Mikael Syväjärvi and Haiyan Ou",

year = "2012",

volume = "717-720",

pages = "233--236",

journal = "Materials Science Forum",

issn = "0255-5476",

}

RIS

TY - JOUR

T1 - Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

A1 - Ou,Yiyu

A1 - Jokubavicius,Valdas

A1 - Liu,Chuan

A1 - Berg,Rolf W.

A1 - Linnarsson,Margareta

A1 - Kamiyama,Satoshi

A1 - Lu,Zhaoyue

A1 - Yakimova,Rositza

A1 - Syväjärvi,Mikael

A1 - Ou,Haiyan

AU - Ou,Yiyu

AU - Jokubavicius,Valdas

AU - Liu,Chuan

AU - Berg,Rolf W.

AU - Linnarsson,Margareta

AU - Kamiyama,Satoshi

AU - Lu,Zhaoyue

AU - Yakimova,Rositza

AU - Syväjärvi,Mikael

AU - Ou,Haiyan

PB - Trans Tech Publications Ltd.

PY - 2012

Y1 - 2012

N2 - Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.

AB - Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.

KW - 6H-SiC

KW - Photoluminescence

KW - Raman spectroscopy

KW - Donor-acceptor-pair emission

KW - Sublimation epitaxy

U2 - 10.4028/www.scientific.net/MSF.717-720.233

DO - 10.4028/www.scientific.net/MSF.717-720.233

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

VL - 717-720

SP - 233

EP - 236

ER -