Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.

Original languageEnglish
JournalMaterials Science Forum
Volume717-720
Pages (from-to)233-236
ISSN0255-5476
DOIs
StatePublished - 2012
Peer-reviewedYes
CitationsWeb of Science® Times Cited: 0

Keywords

  • 6H-SiC, Photoluminescence, Raman spectroscopy, Donor-acceptor-pair emission, Sublimation epitaxy
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