Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures

D. Jacobsson; Johan Mikael Persson; D. Kriegner; T. Etzelstorfer; J. Wallentin; Jakob Birkedal Wagner; J. Stangl; L. Samuelson; K. Deppert; M. T. Borgström

doi:10.1088/0957-4484/23/24/245601

Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures

Publication: Research - peer-review › Journal article – Annual report year: 2012

Standard

Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures. / Jacobsson, D.; Persson, Johan Mikael; Kriegner, D.; Etzelstorfer, T.; Wallentin, J.; Wagner, Jakob Birkedal; Stangl, J.; Samuelson, L.; Deppert, K.; Borgström, M. T.

In: Nanotechnology, Vol. 23, No. 24, 2012, p. 245601.

Publication: Research - peer-review › Journal article – Annual report year: 2012

Harvard

Jacobsson, D, Persson, JM, Kriegner, D, Etzelstorfer, T, Wallentin, J, Wagner, JB, Stangl, J, Samuelson, L, Deppert, K & Borgström, MT 2012, 'Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures' Nanotechnology, vol 23, no. 24, pp. 245601. DOI: 10.1088/0957-4484/23/24/245601

APA

Jacobsson, D., Persson, J. M., Kriegner, D., Etzelstorfer, T., Wallentin, J., Wagner, J. B., ... Borgström, M. T. (2012). Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures. Nanotechnology, 23(24), 245601. DOI: 10.1088/0957-4484/23/24/245601

CBE

Jacobsson D, Persson JM, Kriegner D, Etzelstorfer T, Wallentin J, Wagner JB, Stangl J, Samuelson L, Deppert K, Borgström MT. 2012. Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures. Nanotechnology. 23(24):245601. Available from: 10.1088/0957-4484/23/24/245601

In: Nanotechnology, Vol. 23, No. 24, 2012, p. 245601.

Publication: Research - peer-review › Journal article – Annual report year: 2012

Bibtex

@article{be047a2c8a4544818534f6a9efa3ced6,

title = "Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures",

abstract = "Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.",

author = "D. Jacobsson and Persson, {Johan Mikael} and D. Kriegner and T. Etzelstorfer and J. Wallentin and Wagner, {Jakob Birkedal} and J. Stangl and L. Samuelson and K. Deppert and Borgström, {M. T.}",

year = "2012",

doi = "10.1088/0957-4484/23/24/245601",

volume = "23",

pages = "245601",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "Institute of Physics Publishing Ltd.",

number = "24",

}

RIS

TY - JOUR

T1 - Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures

AU - Jacobsson,D.

AU - Persson,Johan Mikael

AU - Kriegner,D.

AU - Etzelstorfer,T.

AU - Wallentin,J.

AU - Wagner,Jakob Birkedal

AU - Stangl,J.

AU - Samuelson,L.

AU - Deppert,K.

AU - Borgström,M. T.

PY - 2012

Y1 - 2012

N2 - Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.

AB - Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.

U2 - 10.1088/0957-4484/23/24/245601

DO - 10.1088/0957-4484/23/24/245601

M3 - Journal article

VL - 23

SP - 245601

JO - Nanotechnology

T2 - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 24

ER -