Particle-assisted GaxIn1xP nanowire growth for designed bandgap structures

Publication: Research - peer-reviewJournal article – Annual report year: 2012

Standard

Particle-assisted GaxIn1xP nanowire growth for designed bandgap structures. / Jacobsson, D.; Persson, Johan Mikael; Kriegner, D.; Etzelstorfer, T.; Wallentin, J.; Wagner, Jakob Birkedal; Stangl, J.; Samuelson, L.; Deppert, K.; Borgström, M. T.

In: Nanotechnology, Vol. 23, No. 24, 2012, p. 245601.

Publication: Research - peer-reviewJournal article – Annual report year: 2012

Harvard

Jacobsson, D, Persson, JM, Kriegner, D, Etzelstorfer, T, Wallentin, J, Wagner, JB, Stangl, J, Samuelson, L, Deppert, K & Borgström, MT 2012, 'Particle-assisted GaxIn1xP nanowire growth for designed bandgap structures' Nanotechnology, vol 23, no. 24, pp. 245601., 10.1088/0957-4484/23/24/245601

APA

Jacobsson, D., Persson, J. M., Kriegner, D., Etzelstorfer, T., Wallentin, J., Wagner, J. B., ... Borgström, M. T. (2012). Particle-assisted GaxIn1xP nanowire growth for designed bandgap structures. Nanotechnology, 23(24), 245601. 10.1088/0957-4484/23/24/245601

CBE

Jacobsson D, Persson JM, Kriegner D, Etzelstorfer T, Wallentin J, Wagner JB, Stangl J, Samuelson L, Deppert K, Borgström MT. 2012. Particle-assisted GaxIn1xP nanowire growth for designed bandgap structures. Nanotechnology. 23(24):245601. Available from: 10.1088/0957-4484/23/24/245601

MLA

Vancouver

Jacobsson D, Persson JM, Kriegner D, Etzelstorfer T, Wallentin J, Wagner JB et al. Particle-assisted GaxIn1xP nanowire growth for designed bandgap structures. Nanotechnology. 2012;23(24):245601. Available from: 10.1088/0957-4484/23/24/245601

Author

Jacobsson, D.; Persson, Johan Mikael; Kriegner, D.; Etzelstorfer, T.; Wallentin, J.; Wagner, Jakob Birkedal; Stangl, J.; Samuelson, L.; Deppert, K.; Borgström, M. T. / Particle-assisted GaxIn1xP nanowire growth for designed bandgap structures.

In: Nanotechnology, Vol. 23, No. 24, 2012, p. 245601.

Publication: Research - peer-reviewJournal article – Annual report year: 2012

Bibtex

@article{be047a2c8a4544818534f6a9efa3ced6,
title = "Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures",
publisher = "Institute of Physics Publishing",
author = "D. Jacobsson and Persson, {Johan Mikael} and D. Kriegner and T. Etzelstorfer and J. Wallentin and Wagner, {Jakob Birkedal} and J. Stangl and L. Samuelson and K. Deppert and Borgström, {M. T.}",
year = "2012",
doi = "10.1088/0957-4484/23/24/245601",
volume = "23",
number = "24",
pages = "245601",
journal = "Nanotechnology",
issn = "0957-4484",

}

RIS

TY - JOUR

T1 - Particle-assisted Ga<sub>x</sub>In<sub>1</sub>−<sub>x</sub>P nanowire growth for designed bandgap structures

A1 - Jacobsson,D.

A1 - Persson,Johan Mikael

A1 - Kriegner,D.

A1 - Etzelstorfer,T.

A1 - Wallentin,J.

A1 - Wagner,Jakob Birkedal

A1 - Stangl,J.

A1 - Samuelson,L.

A1 - Deppert,K.

A1 - Borgström,M. T.

AU - Jacobsson,D.

AU - Persson,Johan Mikael

AU - Kriegner,D.

AU - Etzelstorfer,T.

AU - Wallentin,J.

AU - Wagner,Jakob Birkedal

AU - Stangl,J.

AU - Samuelson,L.

AU - Deppert,K.

AU - Borgström,M. T.

PB - Institute of Physics Publishing

PY - 2012

Y1 - 2012

N2 - Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.

AB - Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.

U2 - 10.1088/0957-4484/23/24/245601

DO - 10.1088/0957-4484/23/24/245601

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 24

VL - 23

SP - 245601

ER -