Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures
Publication: Research - peer-review › Journal article – Annual report year: 2012
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Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures. / Jacobsson, D.; Persson, Johan Mikael; Kriegner, D.; Etzelstorfer, T.; Wallentin, J.; Wagner, Jakob Birkedal; Stangl, J.; Samuelson, L.; Deppert, K.; Borgström, M. T.
In: Nanotechnology, Vol. 23, No. 24, 2012, p. 245601.Publication: Research - peer-review › Journal article – Annual report year: 2012
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TY - JOUR
T1 - Particle-assisted Ga<sub>x</sub>In<sub>1</sub>−<sub>x</sub>P nanowire growth for designed bandgap structures
A1 - Jacobsson,D.
A1 - Persson,Johan Mikael
A1 - Kriegner,D.
A1 - Etzelstorfer,T.
A1 - Wallentin,J.
A1 - Wagner,Jakob Birkedal
A1 - Stangl,J.
A1 - Samuelson,L.
A1 - Deppert,K.
A1 - Borgström,M. T.
AU - Jacobsson,D.
AU - Persson,Johan Mikael
AU - Kriegner,D.
AU - Etzelstorfer,T.
AU - Wallentin,J.
AU - Wagner,Jakob Birkedal
AU - Stangl,J.
AU - Samuelson,L.
AU - Deppert,K.
AU - Borgström,M. T.
PB - Institute of Physics Publishing
PY - 2012
Y1 - 2012
N2 - Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.
AB - Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.
U2 - 10.1088/0957-4484/23/24/245601
DO - 10.1088/0957-4484/23/24/245601
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 24
VL - 23
SP - 245601
ER -