Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures

Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures

Publication: Research - peer-review › Journal article – Annual report year: 2012

Standard

Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures. / Jacobsson, D.; Persson, Johan Mikael; Kriegner, D.; Etzelstorfer, T.; Wallentin, J.; Wagner, Jakob Birkedal; Stangl, J.; Samuelson, L.; Deppert, K.; Borgström, M. T.

In: Nanotechnology, Vol. 23, No. 24, 2012, p. 245601.

Publication: Research - peer-review › Journal article – Annual report year: 2012

Harvard

Jacobsson, D, Persson, JM, Kriegner, D, Etzelstorfer, T, Wallentin, J, Wagner, JB, Stangl, J, Samuelson, L, Deppert, K & Borgström, MT 2012, 'Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures' Nanotechnology, vol 23, no. 24, pp. 245601.

APA

Jacobsson, D., Persson, J. M., Kriegner, D., Etzelstorfer, T., Wallentin, J., Wagner, J. B., Stangl, J., Samuelson, L., Deppert, K., & Borgström, M. T. (2012). Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures. Nanotechnology, 23(24), 245601. doi: 10.1088/0957-4484/23/24/245601

CBE

Jacobsson D, Persson JM, Kriegner D, Etzelstorfer T, Wallentin J, Wagner JB, Stangl J, Samuelson L, Deppert K, Borgström MT. 2012. Particle-assisted Ga_xIn₁−_xP nanowire growth for designed bandgap structures. Nanotechnology. 23(24):245601.

In: Nanotechnology, Vol. 23, No. 24, 2012, p. 245601.

Publication: Research - peer-review › Journal article – Annual report year: 2012

Bibtex

@article{be047a2c8a4544818534f6a9efa3ced6,

title = "Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures",

publisher = "Institute of Physics Publishing",

author = "D. Jacobsson and Persson, {Johan Mikael} and D. Kriegner and T. Etzelstorfer and J. Wallentin and Wagner, {Jakob Birkedal} and J. Stangl and L. Samuelson and K. Deppert and Borgström, {M. T.}",

year = "2012",

volume = "23",

number = "24",

pages = "245601",

journal = "Nanotechnology",

issn = "0957-4484",

}

RIS

TY - JOUR

T1 - Particle-assisted GaxIn1−xP nanowire growth for designed bandgap structures

A1 - Jacobsson,D.

A1 - Persson,Johan Mikael

A1 - Kriegner,D.

A1 - Etzelstorfer,T.

A1 - Wallentin,J.

A1 - Wagner,Jakob Birkedal

A1 - Stangl,J.

A1 - Samuelson,L.

A1 - Deppert,K.

A1 - Borgström,M. T.

AU - Jacobsson,D.

AU - Persson,Johan Mikael

AU - Kriegner,D.

AU - Etzelstorfer,T.

AU - Wallentin,J.

AU - Wagner,Jakob Birkedal

AU - Stangl,J.

AU - Samuelson,L.

AU - Deppert,K.

AU - Borgström,M. T.

PB - Institute of Physics Publishing

PY - 2012

Y1 - 2012

N2 - Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.

AB - Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.

U2 - 10.1088/0957-4484/23/24/245601

DO - 10.1088/0957-4484/23/24/245601

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 24

VL - 23

SP - 245601

ER -