Particle-assisted GaxIn1xP nanowire growth for designed bandgap structures

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition.
Original languageEnglish
JournalNanotechnology
Publication date2012
Volume23
Issue24
Pages245601
ISSN0957-4484
DOIs
StatePublished
CitationsWeb of Science® Times Cited: 11
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