Optimization of self-mixing modulation in VCSELs for sensing applications

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2009

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This paper numerically investigates, SMI in an oxide aperture VCSEL to optimize the epitaxial structure for higher performance. The standard investigated structure is emitting light at 970 nm from In0.17Ga0.83As-GaAsP QWs sandwiched between 36 pairs of bottom mirror and 23 pairs of top mirror (AlxGa1-xAs). The calculations are based on matrix multiplication for calculating effective reflectivity and transmission with external feedback, combined with a logarithmic gain model and standard laser rate equations. To improve the sensitivity towards self-mixing interference in VCSELs by simple epitaxial means and this should enable us to e.g. measure smaller bending deflections of cantilever sensors
Original languageEnglish
Title of host publicationCLEO/Europe-EQEC 2009
Place of PublicationMunich, Germany
Publication date2009
ISBN (print)978-1-4244-4079-5
StatePublished - 2009
EventEuropean Conference on Lasers and Electro-Optics - European Quantum Electronics Conference 2009 - Munich, Germany


ConferenceEuropean Conference on Lasers and Electro-Optics - European Quantum Electronics Conference 2009
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Bibliographical note

Copyright: 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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