Optical anisotropy in vertically coupled quantum dots

Publication: Research - peer-reviewJournal article – Annual report year: 1999

View graph of relations

We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single-layer and 3-layer structures show only a weak TE polarization, it is enhanced for 10-layer stacks. The 20-layer stacks additionally show a low-energy side-band of high TE polarization, which is attributed to laterally coupled QD's forming after the growth of many layers by lateral coalescence of QD's in the upper layers. While in the single, 3- and 10-layer stacks, both TE polarized PL components an stronger than the TM component, the [110] TE component is weaker than the TM component in the 20-layer stack. This polarization reversal is attributed to an increasing vertical coupling with increasing layer number due to increasing dot size.
Original languageEnglish
JournalPhysical Review B (Condensed Matter and Materials Physics)
Publication date1999
Volume60
Issue24
Pages16680-16685
ISSN1098-0121
DOIs
StatePublished

Bibliographical note

Copyright (1999) by the American Physical Society.

CitationsWeb of Science® Times Cited: 75

Keywords

  • GAAS, GROWTH, ISLANDS, SURFACES, INGAAS, PIEZOSPECTROSCOPY, CORRUGATED SUPERLATTICES
Download as:
Download as PDF
Select render style:
APAAuthorCBEHarvardMLAStandardVancouverShortLong
PDF
Download as HTML
Select render style:
APAAuthorCBEHarvardMLAStandardVancouverShortLong
HTML
Download as Word
Select render style:
APAAuthorCBEHarvardMLAStandardVancouverShortLong
Word

Download statistics

No data available

ID: 4908465