Nonlinear propagation of strong-field THz pulses in doped semiconductors

Publication: Research - peer-reviewConference article – Annual report year: 2012

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We report on nonlinear propagation of single-cycle THz pulses with peak electric fields reaching 300 kV/cm in n-type semiconductors at room temperature. Dramatic THz saturable absorption effects are observed in GaAs, GaP, and Ge, which are caused by the nonlinear electron transport in THz fields. The semiconductor conductivity, and hence the THz absorption, is modulated due to the acceleration of carriers in strong THz fields, leading to an increase of the effective mass of the electron population, as the electrons are redistributed from the low-momentum, low-effective-mass states to the high-momentum, high-effective-mass states in the energy-momentum space of the conduction band. Further, we observe the typical accompanying effects of saturable absorption on the THz pulses, such as an increase of the group delay, as the peak electric field of the pulse increases. In this paper we present the results of nonlinear THz time-domain spectroscopy, and of THz pump - THz probe spectroscopy.
Original languageEnglish
JournalProceedings of SPIE, the International Society for Optical Engineering
Publication date2012
Volume8260
Pages82600G-9
ISSN0277-786X
DOIs
StatePublished

Conference

ConferenceUltrafast Phenomena and Nanophotonics XVI
Number8260
CountryUnited States
CitySan Francisco
Period21/01/1226/01/12
CitationsWeb of Science® Times Cited: 1

Keywords

  • THz spectroscopy, Hot electron transport, Nonlinear processes
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