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A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demonstrate a lateral resolution of similar to 100 nm. We study the low temperature transport properties of nanoscale wires and demonstrate the feasibility of the technique for defining in-plane gates allowing local control of the electrostatic environment in mesoscopic devices. (C) 2018 Author(s).
Original languageEnglish
Article number171606
JournalApplied Physics Letters
Volume112
Issue number17
Number of pages5
ISSN0003-6951
DOIs
StatePublished - 2018
CitationsWeb of Science® Times Cited: 0
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