Mobility and bulk electron-phonon interaction in two-dimensional materials

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2015

DOI

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We present calculations of the phonon-limited mobility in intrinsic n-type monolayer graphene, silicene and MoS2. The material properties, including the electron-phonon interaction, are calculated from first principles. Unlike graphene, the carriers in silicene show strong interaction with the out-of-plane modes. However, we find that graphene only has a slightly higher mobility compared to silicene. For MoS2 we obtain several orders of magnitude lower mobilities and in agreement with other recent theoretical results. The simulations illustrate the predictive capabilities of the newly implemented Boltzmann Transport Equation (BTE) solver in the Atomistix ToolKit (ATK) simulation tool.
Original languageEnglish
Title of host publication2015 International Conference on Simulation of Semiconductor Processes and Devices
Number of pages4
PublisherIEEE
Publication date2015
Pages32-35
ISBN (print)978-1-4673-7858-1
DOIs
StatePublished - 2015
EventInternational Conference on Simulation of Semiconductor Processes and Devices 2015 - Washington DC, United States

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices 2015
CountryUnited States
CityWashington DC
Period09/09/201511/09/2015
SeriesInternational Conference on Simulation of Semiconductor Processes and Devices. Proceedings
ISSN1946-1569
CitationsWeb of Science® Times Cited: No match on DOI
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