MEMS-based thick film PZT vibrational energy harvester

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2011

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We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz.
Original languageEnglish
Title of host publicationMicro Electro Mechanical Systems (MEMS)
PublisherIEEE
Publication date2011
Pages125-128
ISBN (print)978-1-4244-9632-7
DOIs
StatePublished

Conference

Conference24th International Conference on Micro Electro Mechanical Systems
Number24
CountryMexico
CityCancun
Period23/01/1127/01/11
Internet addresshttp://www.ieee-mems2011.org/
CitationsWeb of Science® Times Cited: No match on DOI

Keywords

  • Micromechanical devices, Silicon, Silicon-on-insulator, Lead compounds, Energy harvesting, Thick film devices, Etching, Microfabrication
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