Low-temperature positron-lifetime studies of proton-irradiated silicon

Publication: Research - peer-reviewJournal article – Annual report year: 1990

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Low-temperature positron-lifetime studies of proton-irradiated silicon. / Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren.

In: Physical Review B Condensed Matter, Vol. 42, No. 17, 1990, p. 11166-11173.

Publication: Research - peer-reviewJournal article – Annual report year: 1990

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Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren / Low-temperature positron-lifetime studies of proton-irradiated silicon.

In: Physical Review B Condensed Matter, Vol. 42, No. 17, 1990, p. 11166-11173.

Publication: Research - peer-reviewJournal article – Annual report year: 1990

Bibtex

@article{ac2f3fb59f2e46649d9d0f3a230a2058,
title = "Low-temperature positron-lifetime studies of proton-irradiated silicon",
author = "S. Mäkinen and H. Rajainmäki and Søren Linderoth",
note = "Copyright (1990) by the American Physical Society.",
year = "1990",
doi = "10.1103/PhysRevB.42.11166",
volume = "42",
number = "17",
pages = "11166--11173",
journal = "Physical Review B Condensed Matter",
issn = "0163-1829",

}

RIS

TY - JOUR

T1 - Low-temperature positron-lifetime studies of proton-irradiated silicon

A1 - Mäkinen,S.

A1 - Rajainmäki,H.

A1 - Linderoth,Søren

AU - Mäkinen,S.

AU - Rajainmäki,H.

AU - Linderoth,Søren

PY - 1990

Y1 - 1990

N2 - The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific trapping rate of positrons to both of these negatively charged monovacancy-type defects has been found to have a clear T-0.5 dependence. The positron lifetime in perfect Si is measured to be 217±1 ps, and the monovacancy lifetime is found to be 275±5 ps. Also the negatively charged vacancy-oxygen complexes were found, both experimentally and theoretically, to give rise to a positron lifetime of about 275 ps.

AB - The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific trapping rate of positrons to both of these negatively charged monovacancy-type defects has been found to have a clear T-0.5 dependence. The positron lifetime in perfect Si is measured to be 217±1 ps, and the monovacancy lifetime is found to be 275±5 ps. Also the negatively charged vacancy-oxygen complexes were found, both experimentally and theoretically, to give rise to a positron lifetime of about 275 ps.

UR - http://link.aps.org/doi/10.1103/PhysRevB.42.11166

U2 - 10.1103/PhysRevB.42.11166

DO - 10.1103/PhysRevB.42.11166

JO - Physical Review B Condensed Matter

JF - Physical Review B Condensed Matter

SN - 0163-1829

IS - 17

VL - 42

SP - 11166

EP - 11173

ER -