Lifetime of Nano-Structured Black Silicon for Photovoltaic Applications

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2016

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In this work, we present recent results of lifetime optimization for nano-structured black silicon and its
photovoltaic applications. Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nanostructures with excellent light trapping properties. We applied reactive ion etching technology at -20ºC to create nano-structures on silicon samples and obtained an average reflectance below 0.5%. For passivation purposes, we used 37 nm ALD Al2O3 films. Lifetime measurements resulted in 1220 µs and to 4170 µs for p- and ntype CZ silicon wafers, respectively. This is promising for use of black silicon RIE nano-structuring in a solar cell process flow
Original languageEnglish
Title of host publicationProceedings of 32nd European Photovoltaic Solar Energy Conference and Exhibition
Number of pages4
Publication date2016
Pages764-767
StatePublished - 2016
Event32nd European Photovoltaic Solar Energy Conference and Exhibition - Munich, Germany

Conference

Conference32nd European Photovoltaic Solar Energy Conference and Exhibition
LocationICM - International Congress Center
CountryGermany
CityMunich
Period20/06/201624/06/2016
Internet address

    Keywords

  • c-Si, Black Silicon, ALD Al2O3, Passivation, Lifetime, Light trapping, Nano-structured silicon
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