Publication: Research - peer-review › Journal article – Annual report year: 2010
We propose and demonstrate an alternative type of photonic crystal laser design that shifts all the holes in the lattice by a fixed fraction of the targeted emission wavelength. The structures are realized in InGaAsP =1.15 with InGaAsP quantum wells =1.52 as gain material. Cavities with shifts of 1/4 and 3/4 of the emission wavelength were fabricated and characterized. Measurements show threshold behavior for several modes at room temperature. Both structures are simulated using a finite difference time domain method to identify the resonances in the spectra and calculate the mode volume of the dominant mode.
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- III-V semiconductors, laser modes, semiconductor quantum wells, gallium arsenide, laser cavity resonators, gallium compounds, finite difference time-domain analysis, quantum well lasers, photonic crystals, indium compounds