Junction leakage measurements with micro four-point probes

Publication: Research - peer-reviewConference article – Annual report year: 2012

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We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations.
Original languageEnglish
JournalA I P Conference Proceedings Series
Publication date2012
Volume1496
Pages175-178
ISSN0094-243X
StatePublished

Conference

ConferenceInternational Conference on Ion Implantation Technology
Number19th
CountrySpain
CityValladolid
Period25/06/1229/06/12
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