Junction leakage measurements with micro four-point probes
Publication: Research - peer-review › Conference article – Annual report year: 2012
We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations.
Original language | English |
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Journal | A I P Conference Proceedings Series |
Volume | 1496 |
Pages (from-to) | 175-178 |
ISSN | 0094-243X |
State | Published - 2012 |
Event | International Conference on Ion Implantation Technology - Valladolid, Spain |
Conference
Conference | International Conference on Ion Implantation Technology |
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Number | 19th |
Country | Spain |
City | Valladolid |
Period | 25/06/2012 → 29/06/2012 |
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ID: 23335921