Integration of photodetectors with lasers for optical interconnects using 200 mm waferscale III-V/SOI technology

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2011

  • Author: Spuesens, Thijs

    Ghent University

  • Author: Liu, Liu

    Department of Photonics Engineering, Technical University of Denmark

  • Author: Vermeulen, Diedrik

    Ghent University

  • Author: Zhao, Jing

    Eindhoven University of Technology

  • Author: Rojo Romeo, Pedro

    Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270

  • Author: Regreny, Philippe

    Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270

  • Author: Grenouillet, Laurent

    CEA, LETI, MINATEC

  • Author: Fédeli, Jean-Marc

    CEA, LETI, MINATEC

  • Author: Van Thourhout, Dries

    Ghent University

View graph of relations

We demonstrate efficient photodetectors on top of a laser epitaxial structure completely fabricated using 200 mm wafer scale III-V/SOI technology enabling very dense integration of lasers and detectors for optical interconnect circuits.
Original languageEnglish
Title of host publication2011 and the National Fiber Optic Engineers Conference Optical Fiber Communication Conference and Exposition (OFC/NFOEC)
PublisherOptical Society of America
Publication date2011
PagesJThA27.
ISBN (print)978-1-4577-0213-6
StatePublished

Conference

Conference2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference
CountryUnited States
CityLos Angeles, CA
Period06/03/1110/03/11
Internet addresshttp://www.ofcnfoec.org/
Download as:
Download as PDF
Select render style:
APAAuthorCBEHarvardMLAStandardVancouverShortLong
PDF
Download as HTML
Select render style:
APAAuthorCBEHarvardMLAStandardVancouverShortLong
HTML
Download as Word
Select render style:
APAAuthorCBEHarvardMLAStandardVancouverShortLong
Word

ID: 5657767