In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

Publication: Research - peer-reviewJournal article – Annual report year: 2012

  • Author: Shimura, Y.

    Nagoya University, Graduate School of Engineering

  • Author: Takeuchi, S.

    Nagoya University, Graduate School of Engineering

  • Author: Nakatsuka, O.

    Nagoya University, Graduate School of Engineering

  • Author: Vincent, B.

    IMEC

  • Author: Gencarelli, F.

    IMEC

  • Author: Clarysse, T.

    IMEC

  • Author: Vandervorst, W.

    IMEC

  • Author: Caymax, M.

    IMEC

  • Author: Loo, R.

    IMEC

  • Author: Jensen, A.

    Capres A/S

  • Author: Petersen, Dirch Hjorth

    Department of Micro- and Nanotechnology, Technical University of Denmark, Ørsteds Plads, 2800, Kgs. Lyngby, Denmark

  • Author: Zaima, S.

    Nagoya University, Graduate School of Engineering

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We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge1-xSnx layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C for 1min is 3.6 times less than that of the Ga-doped Ge/Ge sample.
Original languageEnglish
JournalThin Solid Films
Publication date2012
Volume520
Issue8
Pages3206-3210
ISSN0040-6090
DOIs
StatePublished
CitationsWeb of Science® Times Cited: 6

Keywords

  • Epitaxial growth, Gallium, Germanium, Tin, Impurity doping
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