Influence of A-site Gd doping on the microstructure and dielectric properties of Ba(Zr0.1Ti0.9)O3 ceramics

Publication: Research - peer-reviewJournal article – Annual report year: 2012

Without internal affiliation

  • Author: Reddy Sudireddy, Bhaskar

    Indian Institute of Technology, Madras

  • Author: Prasad Rao, K.

    Indian Institute of Technology, Madras, India

  • Author: Ramachandra Rao, M.S.

    Indian Institute of Technology, Madras, India

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Pure and Gd-doped barium zirconate titanate (BaZr0.1Ti0.9O3, BZT) ceramics were prepared by solid state reaction method. Phase analysis showed the formation of the pyrochlore phase (Gd2Ti2O7) at about 5mol% Gd doping in BZT. The microstructural investigation on the sintered ceramics showed that Gd doping significantly reduced the grain size of pure BZT ceramics, from about 100μm to 2–5μm. Change in the Gd concentration had minor influence on the grain size and on morphology. An increase in the Gd content decreased the Curie temperature (TC) of the BZT ceramics. The maximum dielectric constant at TC was observed for 2mol% Gd and with further increase in Gd content the dielectric constant at TC decreased. The dielectric constant was significantly improved compared to that of pure BZT ceramic. Tunable dielectric materials with good dielectric properties can be prepared by doping BZT with Gd.
Original languageEnglish
JournalJournal of Alloys and Compounds
Issue number4
Pages (from-to)1266-1270
StatePublished - 2011
Externally publishedYes
CitationsWeb of Science® Times Cited: 15
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ID: 8009993