Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2012

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We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.
Original languageEnglish
Title of host publication2012 23rd IEEE International Semiconductor Laser Conference (ISLC)
PublisherIEEE
Publication date2012
Pages133-134
ISBN (print)978-1-4577-0828-2
DOIs
StatePublished

Conference

Conference23rd IEEE International Semiconductor Laser Conference (ISLC 2012)
CountryUnited States
CitySan Diego, California
Period07/10/1210/10/12
Internet addresshttp://www.islc-ieee.org/
NameI E E E International Semiconductor Laser Conference. Conference Digest
ISSN (Print)0899-9406
CitationsWeb of Science® Times Cited: No match on DOI

Keywords

  • Mode-locked lasers, Semiconductor lasers, Selective area growth
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