Publication: Research - peer-review › Article in proceedings – Annual report year: 2011
In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature.
|Title||2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM)|
|Conference||23rd International Conference on Indium Phosphide and Related Materials|
|Period||22/05/11 → 25/05/11|
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