InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2011

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In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature.
Original languageEnglish
Title of host publication2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials Compound Semiconductor Week (CSW/IPRM)
PublisherIEEE
Publication date2011
ISBN (print)978-1-4577-1753-6
StatePublished

Conference

Conference23rd International Conference on Indium Phosphide and Related Materials
Number23
CountryGermany
CityBerlin
Period22/05/1125/05/11
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