Improved current transport properties of post annealed Y1Ba2Cu3O7-x thin films using Ag doping

Publication: Research - peer-reviewJournal article – Annual report year: 1996

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The influence of Ag doping on the transport properties of Y1Ba2Cu3O7–x thin films prepared by Y, BaF2, and Cu co-evaporation and optimized ex situ post annealing has been investigated. Both undoped and Ag doped films have values of Tc above 90 K, but Jc (77 K) is highly dependent on the nominal thickness (tnom) of the as-deposited film. For undoped films with tnom>106 A/cm2) decreases monotonically with increasing film thickness. Above 300 nm Jc (77 K) decreases rapidly to values below 5×105 A/cm2. Ag doped films with tnom>=200 nm have higher Jc (77 K) values than those of undoped films. Ag doped films have a maximum in Jc (77 K) around 250 nm. As for the undoped films, there is a large decrease in Jc (77 K) for Ag doped films with tnom>=300 nm. It was found that the higher values of Jc (77 K) for the Ag doped films were due to a better epitaxial growth of the YBCO compound. The low values of Jc (77 K) for both undoped and Ag doped single layer films with tnom>=300 nm were found to be due to the absence of 1–2–4 inclusions in these films. Based on these findings high Jc (77 K) films with tnom>~300 nm were grown by successive deposition and annealing of films with tnom
Original languageEnglish
JournalJournal of Applied Physics
Publication date1996
Volume79
Journal number9
Pages7062-7068
ISSN0021-8979
DOIs
StatePublished

Bibliographical note

Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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