InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources

Publication: Research - peer-reviewJournal article – Annual report year: 2013

  • Author: Kraemer, Tomas

    Ferdinand-Braun-Institut, Germany

  • Author: Ostermay, Ina

    Ferdinand-Braun-Institut, Germany

  • Author: Jensen, Thomas

    Ferdinand-Braun-Institut, Germany

  • Author: Johansen, Tom Keinicke

    Electromagnetic Systems, Department of Electrical Engineering, Technical University of Denmark, Ørsteds Plads, 2800, Kgs. Lyngby, Denmark

  • Author: Schmueckle, Franz-Josef

    Ferdinand-Braun-Institut, Germany

  • Author: Thies, Andreas

    Ferdinand-Braun-Institut, Germany

  • Author: Krozer, Viktor

    Ferdinand-Braun-Institut, Germany

  • Author: Heinrich, Wolfgang

    Ferdinand-Braun-Institut, Germany

  • Author: Krueger, Olaf

    Ferdinand-Braun-Institut, Germany

  • Author: Traenkle, Günther

    Ferdinand-Braun-Institut, Germany

  • Author: Lisker, Marco

    Leibniz-Institut für innovative Mikroelektronik, Germany

  • Author: Trusch, Andreas

    Leibniz-Institut für innovative Mikroelektronik, Germany

  • Author: Kulse, Philip

    Leibniz-Institut für innovative Mikroelektronik, Germany

  • Author: Tillack, Bernd

    Leibniz-Institut für innovative Mikroelektronik, Germany

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This paper presents a novel InP-SiGe BiCMOS technology using wafer-scale heterogeneous integration. The vertical stacking of the InP double heterojunction bipolar transistor (DHBT) circuitry directly on top of the BiCMOS wafer enables ultra-broadband interconnects with <0.2 dB insertion loss from 0-100 GHz. The 0.8 × 5 μm2 InP DHBTs show fT/fmax of 400/350 GHz with an output power of more than 26 mW at 96 GHz. These are record values for a heterogeneously integrated transistor on silicon. As a circuit example, a 164-GHz signal source is presented. It features a voltage-controlled oscillator in BiCMOS, which drives a doubler-amplifier chain in InP DHBT technology.
Original languageEnglish
JournalI E E E Transactions on Electron Devices
Volume60
Issue number7
Pages (from-to)2209-2216
ISSN0018-9383
DOIs
StatePublished - 2013
CitationsWeb of Science® Times Cited: 10

    Keywords

  • BiCMOS integrated circuits, Double heterojunction bipolar transistors (DHBT), Integrated circuit design, Millimeter wave circuits, Voltage-controlled oscillators (VCOs)
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