Anomalously high thermoelectric power factor in epitaxial ScN thin films
Publication: Research - peer-review › Journal article – Annual report year: 2011
Thermoelectric properties of ScN thin films grown by reactive magnetron sputtering on Al2O3(0001) wafers are reported. X-ray diffraction and elastic recoil detection analyses show that the composition of the films is close to stoichiometry with trace amounts (∼1 at. % in total) of C, O, and F. We found that the ScN thin-film exhibits a rather low electrical resistivity of ∼2.94 μΩm, while its Seebeck coefficient is approximately ∼−86 μV/K at 800 K, yielding a power factor of ∼2.5 × 10−3 W/mK2. This value is anomalously high for common transition-metal nitrides.
© 2011 American Institute of Physics
| Original language | English |
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| Journal | Applied Physics Letters |
| Publication date | 2011 |
| Volume | 99 |
| Pages | 232113 |
| ISSN | 0003-6951 |
| DOIs | |
| State | Published |
| Citations | Web of Science® Times Cited: 2 |
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ID: 6356544