Homogeneous linewidth of self-assembled III-V quantum dots observed in single-dot photoluminescence

Publication: Research - peer-reviewJournal article – Annual report year: 2003

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We report photoluminescence emission from single self-assembled InAlGaAs quantum dots, which is broadened purely by dephasing processes. We observe linewidths as low as 6+/-3@meV at 10K, which agrees with the homogeneous linewidth derived from four-wave mixing experiments. By selecting dots that are not affected by local field fluctuations and using high-energy excitation, we avoid additional sources of linewidth broadening typically present in single-dot photoluminescence spectra. We observe a strong LO-phonon coupling in InAlGaAs and InGaAs dots, which becomes the dominating contribution to the linewidth above 50K.
Original languageEnglish
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Publication date2003
Volume17
Pages1-6
ISSN1386-9477
DOIs
StatePublished
CitationsWeb of Science® Times Cited: 19
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