Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

Publication: Research - peer-reviewArticle in proceedings – Annual report year: 2011


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This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer/mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency.
Original languageEnglish
Title of host publicationProceedings of PowerMEMS 2011
Publication date2011
StatePublished - 2011
EventPower MEMS 2011 - Seoul, Republic of Korea


ConferencePower MEMS 2011
CitySeoul, Republic of Korea
Period01/01/2011 → …


  • PZT thick film, High yield, MEMS, Energy harvester, Screen printing
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ID: 6605767