Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process

Publication: Research - peer-reviewConference article – Annual report year: 2012

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Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process. / Lei, Anders; Xu, Ruichao; Borregaard, Louise M.; Guizzetti, Michele; Thomsen, Erik V.; Dziuban, Jan (Editor); Walczak, Rafal (Editor).

In: Procedia Engineering, Vol. 47, 2012, p. 554-557.

Publication: Research - peer-reviewConference article – Annual report year: 2012

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Lei, Anders; Xu, Ruichao; Borregaard, Louise M.; Guizzetti, Michele; Thomsen, Erik V.; Dziuban, Jan (Editor); Walczak, Rafal (Editor) / Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process.

In: Procedia Engineering, Vol. 47, 2012, p. 554-557.

Publication: Research - peer-reviewConference article – Annual report year: 2012

Bibtex

@article{4fae625181c74138806dfcb73a6af52e,
title = "Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process",
publisher = "Elsevier BV",
author = "Anders Lei and Ruichao Xu and Borregaard, {Louise M.} and Michele Guizzetti and Thomsen, {Erik V.} and Jan Dziuban and Rafal Walczak",
year = "2012",
doi = "10.1016/j.proeng.2012.09.207",
volume = "47",
pages = "554--557",
journal = "Procedia Engineering",
issn = "1877-7058",

}

RIS

TY - CONF

T1 - Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process

A1 - Lei,Anders

A1 - Xu,Ruichao

A1 - Borregaard,Louise M.

A1 - Guizzetti,Michele

A1 - Thomsen,Erik V.

AU - Lei,Anders

AU - Xu,Ruichao

AU - Borregaard,Louise M.

AU - Guizzetti,Michele

AU - Thomsen,Erik V.

A2 - Dziuban,Jan

A2 - Walczak,Rafal

ED - Dziuban,Jan

ED - Walczak,Rafal

PB - Elsevier BV

PY - 2012

Y1 - 2012

N2 - This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been characterized. Measurements of the open circuit voltage showed a relative difference of 32.6% between the standard deviation and average. Measurements of the capacitance and resonant frequency showed a relative difference between the standard deviation and average value of 4.3% and 2.9% respectively, thus indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing harvester.

AB - This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been characterized. Measurements of the open circuit voltage showed a relative difference of 32.6% between the standard deviation and average. Measurements of the capacitance and resonant frequency showed a relative difference between the standard deviation and average value of 4.3% and 2.9% respectively, thus indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing harvester.

KW - Energy harvesting

KW - Vibration harvesting

KW - MEMS

KW - PZT

KW - Thick film

U2 - 10.1016/j.proeng.2012.09.207

DO - 10.1016/j.proeng.2012.09.207

JO - Procedia Engineering

JF - Procedia Engineering

SN - 1877-7058

VL - 47

SP - 554

EP - 557

ER -