Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process
Publication: Research - peer-review › Conference article – Annual report year: 2012
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Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process. / Lei, Anders; Xu, Ruichao; Borregaard, Louise M.; Guizzetti, Michele; Thomsen, Erik V.; Dziuban, Jan (Editor); Walczak, Rafal (Editor).
In: Procedia Engineering, Vol. 47, 2012, p. 554-557.Publication: Research - peer-review › Conference article – Annual report year: 2012
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TY - CONF
T1 - Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process
A1 - Lei,Anders
A1 - Xu,Ruichao
A1 - Borregaard,Louise M.
A1 - Guizzetti,Michele
A1 - Thomsen,Erik V.
AU - Lei,Anders
AU - Xu,Ruichao
AU - Borregaard,Louise M.
AU - Guizzetti,Michele
AU - Thomsen,Erik V.
A2 - Dziuban,Jan
A2 - Walczak,Rafal
ED - Dziuban,Jan
ED - Walczak,Rafal
PB - Elsevier BV
PY - 2012
Y1 - 2012
N2 - This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been characterized. Measurements of the open circuit voltage showed a relative difference of 32.6% between the standard deviation and average. Measurements of the capacitance and resonant frequency showed a relative difference between the standard deviation and average value of 4.3% and 2.9% respectively, thus indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing harvester.
AB - This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been characterized. Measurements of the open circuit voltage showed a relative difference of 32.6% between the standard deviation and average. Measurements of the capacitance and resonant frequency showed a relative difference between the standard deviation and average value of 4.3% and 2.9% respectively, thus indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing harvester.
KW - Energy harvesting
KW - Vibration harvesting
KW - MEMS
KW - PZT
KW - Thick film
U2 - 10.1016/j.proeng.2012.09.207
DO - 10.1016/j.proeng.2012.09.207
JO - Procedia Engineering
JF - Procedia Engineering
SN - 1877-7058
VL - 47
SP - 554
EP - 557
ER -