Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process

Publication: Research - peer-reviewConference article – Annual report year: 2012

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This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been characterized. Measurements of the open circuit voltage showed a relative difference of 32.6% between the standard deviation and average. Measurements of the capacitance and resonant frequency showed a relative difference between the standard deviation and average value of 4.3% and 2.9% respectively, thus indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing harvester.
Original languageEnglish
JournalProcedia Engineering
Publication date2012
Volume47
Pages554-557
ISSN1877-7058
DOIs
StatePublished

Conference

ConferenceEurosensors 2012
NumberXXVI
CountryPoland
CityKrakow
Period09/09/1212/09/12
CitationsWeb of Science® Times Cited: 0

Keywords

  • Energy harvesting, Vibration harvesting, MEMS, PZT, Thick film
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