High-efficiency, large-bandwidth silicon-on-insulator grating coupler based on a fully-etched photonic crystal structure

Publication: Research - peer-reviewJournal article – Annual report year: 2010

Standard

Harvard

APA

CBE

MLA

Vancouver

Author

Bibtex

@article{cc63abf108d84e4da447683601df18f5,
title = "High-efficiency, large-bandwidth silicon-on-insulator grating coupler based on a fully-etched photonic crystal structure",
publisher = "American Institute of Physics",
author = "Liu Liu and Minhao Pu and Kresten Yvind and Hvam, {Jørn Märcher}",
note = "Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",
year = "2010",
doi = "10.1063/1.3304791",
volume = "96",
number = "5",
pages = "051126",
journal = "Applied Physics Letters",
issn = "0003-6951",

}

RIS

TY - JOUR

T1 - High-efficiency, large-bandwidth silicon-on-insulator grating coupler based on a fully-etched photonic crystal structure

A1 - Liu,Liu

A1 - Pu,Minhao

A1 - Yvind,Kresten

A1 - Hvam,Jørn Märcher

AU - Liu,Liu

AU - Pu,Minhao

AU - Yvind,Kresten

AU - Hvam,Jørn Märcher

PB - American Institute of Physics

PY - 2010

Y1 - 2010

N2 - A grating coupler for interfacing between single-mode fibers and photonic circuits on silicon-on-insulator is demonstrated. It consists of columns of fully etched photonic crystal holes, which are made in the same lithography and etching processes used for making the silicon-on-insulator wire waveguide. The holes have a diameter of around 143 nm, and are defined with electron-beam lithography. A peak coupling efficiency of 42% at 1550 nm and 1 dB bandwidth of 37 nm, as well as a low back reflection, are achieved. The performance of the proposed fully etched grating coupler is comparable to that based on the conventional shallowly etched grating, which needs additional fabrication steps.

AB - A grating coupler for interfacing between single-mode fibers and photonic circuits on silicon-on-insulator is demonstrated. It consists of columns of fully etched photonic crystal holes, which are made in the same lithography and etching processes used for making the silicon-on-insulator wire waveguide. The holes have a diameter of around 143 nm, and are defined with electron-beam lithography. A peak coupling efficiency of 42% at 1550 nm and 1 dB bandwidth of 37 nm, as well as a low back reflection, are achieved. The performance of the proposed fully etched grating coupler is comparable to that based on the conventional shallowly etched grating, which needs additional fabrication steps.

UR - http://link.aip.org/link/APPLAB/v96/i5/p051126/s1

U2 - 10.1063/1.3304791

DO - 10.1063/1.3304791

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

VL - 96

SP - 051126

ER -