High Q gallium nitride microring resonators

Publication: Research - peer-reviewConference abstract in proceedings – Annual report year: 2017

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Summary form only given. Gallium nitride (GaN) is a promising material for nonlinear microresonators. It has large intrinsic χ(2) and χ(3), excellent thermal properties and a relatively large bandgap [1] and can be used for example for parametric conversion and frequency doubling [2]. Furthermore it is quite resilient and can withstand high temperatures and power. In this paper, we demonstrate GaN microring resonators with a quality factor (Q) larger than 105, which, to the best of our knowledge, is the highest demonstrated Q for microring resonators in a pure GaN platform [3].
Original languageEnglish
Title of host publication2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
Number of pages1
PublisherIEEE
Publication date2017
DOIs
StatePublished - 2017
EventThe European Conference on Lasers and Electro-Optics, CLEO_Europe 2017 - Munich, Germany

Conference

ConferenceThe European Conference on Lasers and Electro-Optics, CLEO_Europe 2017
LocationMunich (ICM), Germany.
CountryGermany
CityMunich
Period25/06/201729/06/2017
Internet address
CitationsWeb of Science® Times Cited: No match on DOI
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