High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

Publication: Research - peer-review › Journal article – Annual report year: 2011

Standard

High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities. / Chen, Zhuoying; Lee, Mi Jung; Ashraf, Raja Shahid; Gu, Yun; Albert-Seifried, Sebastian; Nielsen, Martin Meedom; Schroeder, Bob; Anthopoulos, Thomas D.; Heeney, Martin; McCulloch, Iain; Sirringhaus, Henning.

In: Advanced Materials, Vol. 24, No. 5, 2012, p. 647-652.

Publication: Research - peer-review › Journal article – Annual report year: 2011

Author

Chen, Zhuoying; Lee, Mi Jung; Ashraf, Raja Shahid; Gu, Yun; Albert-Seifried, Sebastian; Nielsen, Martin Meedom; Schroeder, Bob; Anthopoulos, Thomas D.; Heeney, Martin; McCulloch, Iain; Sirringhaus, Henning / High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities.

In: Advanced Materials, Vol. 24, No. 5, 2012, p. 647-652.

Publication: Research - peer-review › Journal article – Annual report year: 2011

Bibtex

@article{d0487227b0f947029ad7cdb7d3788b48,

title = "High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities",

publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",

author = "Zhuoying Chen and Lee, {Mi Jung} and Ashraf, {Raja Shahid} and Yun Gu and Sebastian Albert-Seifried and Nielsen, {Martin Meedom} and Bob Schroeder and Anthopoulos, {Thomas D.} and Martin Heeney and Iain McCulloch and Henning Sirringhaus",

year = "2012",

volume = "24",

number = "5",

pages = "647--652",

journal = "Advanced Materials",

issn = "0935-9648",

}

RIS

TY - JOUR

T1 - High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

A1 - Chen,Zhuoying

A1 - Lee,Mi Jung

A1 - Ashraf,Raja Shahid

A1 - Gu,Yun

A1 - Albert-Seifried,Sebastian

A1 - Nielsen,Martin Meedom

A1 - Schroeder,Bob

A1 - Anthopoulos,Thomas D.

A1 - Heeney,Martin

A1 - McCulloch,Iain

A1 - Sirringhaus,Henning

AU - Chen,Zhuoying

AU - Lee,Mi Jung

AU - Ashraf,Raja Shahid

AU - Gu,Yun

AU - Albert-Seifried,Sebastian

AU - Nielsen,Martin Meedom

AU - Schroeder,Bob

AU - Anthopoulos,Thomas D.

AU - Heeney,Martin

AU - McCulloch,Iain

AU - Sirringhaus,Henning

PB - Wiley - V C H Verlag GmbH & Co. KGaA

PY - 2012

Y1 - 2012

N2 - Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

AB - Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.

KW - Ambipolar transport

KW - Ambipolar devices

KW - Solution processing

KW - Field-effect transistors

KW - Polymers

U2 - 10.1002/adma.201102786

DO - 10.1002/adma.201102786

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 5

VL - 24

SP - 647

EP - 652

ER -