• Author: Chen, Zhuoying

    University of Cambridge, United Kingdom

  • Author: Lee, Mi Jung

    University of Cambridge, United Kingdom

  • Author: Ashraf, Raja Shahid

    Department of Chemistry and Centre for Plastic electronics, Imperial College, United Kingdom

  • Author: Gu, Yun

    University of Copenhagen, Denmark

  • Author: Albert-Seifried, Sebastian

    University of Cambridge, United Kingdom

  • Author: Nielsen, Martin Meedom

    Metal Structures in Four Dimensions, Materials Research Division, Risø National Laboratory for Sustainable Energy, Technical University of Denmark, Denmark

  • Author: Schroeder, Bob

    Université libre de Bruxelles, Belgium

  • Author: Anthopoulos, Thomas D.

    Department of Physics and Centre for Plastic electronics, Imperial College, United Kingdom

  • Author: Heeney, Martin

    Department of Physics and Centre for Plastic electronics, Imperial College, United Kingdom

  • Author: McCulloch, Iain

    Department of Physics and Centre for Plastic electronics, Imperial College, United Kingdom

  • Author: Sirringhaus, Henning

    University of Cambridge, United Kingdom

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Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.
Original languageEnglish
JournalAdvanced Materials
Publication date2012
Volume24
Issue5
Pages647-652
ISSN0935-9648
DOIs
StatePublished
CitationsWeb of Science® Times Cited: 158

Keywords

  • Ambipolar transport, Ambipolar devices, Solution processing, Field-effect transistors, Polymers
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