High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions
Publication: Research - peer-review › Journal article – Annual report year: 2012
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High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions. / Stamate, Eugen; Draghici, M.
In: Journal of Applied Physics, Vol. 111, No. 8, 2012, p. 083303.Publication: Research - peer-review › Journal article – Annual report year: 2012
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TY - JOUR
T1 - High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions
A1 - Stamate,Eugen
A1 - Draghici,M.
AU - Stamate,Eugen
AU - Draghici,M.
PB - American Institute of Physics
PY - 2012
Y1 - 2012
N2 - A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 x 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF6 gas mixture when a magnetic filter was used to reduce the electron temperature to about 1.2 eV. Mass spectrometry and electrostatic probe were used for plasma diagnostics. The new source is free of density jumps and instabilities and shows a very good stability for plasma potential, and the dominant negative ion species is F-. The magnetic field in plasma volume is negligible and there is no contamination by filaments. The etching rate by negative ions measured in Ar/SF6/O-2 mixtures was almost similar with that by positive ions reaching 700 nm/min. (C) 2012 American Institute of Physics
AB - A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 x 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF6 gas mixture when a magnetic filter was used to reduce the electron temperature to about 1.2 eV. Mass spectrometry and electrostatic probe were used for plasma diagnostics. The new source is free of density jumps and instabilities and shows a very good stability for plasma potential, and the dominant negative ion species is F-. The magnetic field in plasma volume is negligible and there is no contamination by filaments. The etching rate by negative ions measured in Ar/SF6/O-2 mixtures was almost similar with that by positive ions reaching 700 nm/min. (C) 2012 American Institute of Physics
KW - Physics
KW - Reactive plasmas
KW - Surface condition
KW - Silicon
KW - Probe
KW - SF6
KW - Performance
KW - Design
U2 - 10.1063/1.4704696
DO - 10.1063/1.4704696
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 8
VL - 111
SP - 083303
ER -