High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions. / Stamate, Eugen; Draghici, M.

In: Journal of Applied Physics, Vol. 111, No. 8, 2012, p. 083303.

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Author

Stamate, Eugen; Draghici, M. / High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions.

In: Journal of Applied Physics, Vol. 111, No. 8, 2012, p. 083303.

Publication: Research - peer-reviewJournal article – Annual report year: 2012

Bibtex

@article{5e937edbab284bf49ace75de865eb96d,
title = "High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions",
keywords = "Physics, Reactive plasmas, Surface condition, Silicon, Probe, SF6, Performance, Design",
publisher = "American Institute of Physics",
author = "Eugen Stamate and M. Draghici",
year = "2012",
doi = "10.1063/1.4704696",
volume = "111",
number = "8",
pages = "083303",
journal = "Journal of Applied Physics",
issn = "0021-8979",

}

RIS

TY - JOUR

T1 - High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

A1 - Stamate,Eugen

A1 - Draghici,M.

AU - Stamate,Eugen

AU - Draghici,M.

PB - American Institute of Physics

PY - 2012

Y1 - 2012

N2 - A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 x 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF6 gas mixture when a magnetic filter was used to reduce the electron temperature to about 1.2 eV. Mass spectrometry and electrostatic probe were used for plasma diagnostics. The new source is free of density jumps and instabilities and shows a very good stability for plasma potential, and the dominant negative ion species is F-. The magnetic field in plasma volume is negligible and there is no contamination by filaments. The etching rate by negative ions measured in Ar/SF6/O-2 mixtures was almost similar with that by positive ions reaching 700 nm/min. (C) 2012 American Institute of Physics

AB - A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 x 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF6 gas mixture when a magnetic filter was used to reduce the electron temperature to about 1.2 eV. Mass spectrometry and electrostatic probe were used for plasma diagnostics. The new source is free of density jumps and instabilities and shows a very good stability for plasma potential, and the dominant negative ion species is F-. The magnetic field in plasma volume is negligible and there is no contamination by filaments. The etching rate by negative ions measured in Ar/SF6/O-2 mixtures was almost similar with that by positive ions reaching 700 nm/min. (C) 2012 American Institute of Physics

KW - Physics

KW - Reactive plasmas

KW - Surface condition

KW - Silicon

KW - Probe

KW - SF6

KW - Performance

KW - Design

U2 - 10.1063/1.4704696

DO - 10.1063/1.4704696

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

VL - 111

SP - 083303

ER -