Ge-nanoclusters were formed by electron-beam irradiation in Ge-doped silica-on-silicon thin films. The size and density of the clusters can be controlled by the irradiation intensity and time.
Publication: Research - peer-review › Journal article – Annual report year: 2006
Ge-nanoclusters were formed by electron-beam irradiation in Ge-doped silica-on-silicon thin films. The size and density of the clusters can be controlled by the irradiation intensity and time.
| Original language | English |
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| Journal | ELECTRONICS LETTERS |
| Publication date | 2006 |
| Volume | 42 |
| Journal number | 9 |
| Pages | 532-534 |
| ISSN | 0013-5194 |
| DOIs | |
| State | Published |
| Citations | Web of Science® Times Cited: 2 |
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ID: 2470780