Fundamental and second-order phonon processes in CdTe and ZnTe

Publication: Research - peer-reviewJournal article – Annual report year: 2001

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Fundamental and second-order phonon processes in CdTe and ZnTe. / Schall, M.; Walther, M.; Jepsen, Peter Uhd.

In: Physical Review B, Vol. 64, No. 9, 01.09.2001.

Publication: Research - peer-reviewJournal article – Annual report year: 2001

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Schall, M.; Walther, M.; Jepsen, Peter Uhd / Fundamental and second-order phonon processes in CdTe and ZnTe.

In: Physical Review B, Vol. 64, No. 9, 01.09.2001.

Publication: Research - peer-reviewJournal article – Annual report year: 2001

Bibtex

@article{d8e7b189ecba4018923f70812ae15573,
title = "Fundamental and second-order phonon processes in CdTe and ZnTe",
publisher = "American Physical Society",
author = "M. Schall and M. Walther and Jepsen, {Peter Uhd}",
year = "2001",
doi = "10.1103/PhysRevB.64.094301",
volume = "64",
number = "9",
journal = "Physical Review B",
issn = "0163-1829",

}

RIS

TY - JOUR

T1 - Fundamental and second-order phonon processes in CdTe and ZnTe

A1 - Schall,M.

A1 - Walther,M.

A1 - Jepsen,Peter Uhd

AU - Schall,M.

AU - Walther,M.

AU - Jepsen,Peter Uhd

PB - American Physical Society

PY - 2001/9/1

Y1 - 2001/9/1

N2 - Fundamental and higher-order photon-phonon interactions dominate the far infrared absorption and dispersion spectrum of most semiconductors and dielectrics. We present a detailed investigation of the temperature dependence of the dielectric function of the important II-VI semiconductors CdTe and ZnTe in the frequency range below 3 THz, between 10 and 300 K. From the dielectric function we determine the temperature dependence of the fundamental trans verse-optical (TO) frequency in CdTe and ZnTe as well as the TO phonon damping rate in CdTe, and the dynamic ionic charge of both crystals is infer-red from the measurements. Furthermore, our experimental data enable unambiguous assignment of low-frequency absorption bands to sum and difference combinations of fundamental phonon modes at critical points away from the Brillouin zone center.

AB - Fundamental and higher-order photon-phonon interactions dominate the far infrared absorption and dispersion spectrum of most semiconductors and dielectrics. We present a detailed investigation of the temperature dependence of the dielectric function of the important II-VI semiconductors CdTe and ZnTe in the frequency range below 3 THz, between 10 and 300 K. From the dielectric function we determine the temperature dependence of the fundamental trans verse-optical (TO) frequency in CdTe and ZnTe as well as the TO phonon damping rate in CdTe, and the dynamic ionic charge of both crystals is infer-red from the measurements. Furthermore, our experimental data enable unambiguous assignment of low-frequency absorption bands to sum and difference combinations of fundamental phonon modes at critical points away from the Brillouin zone center.

U2 - 10.1103/PhysRevB.64.094301

DO - 10.1103/PhysRevB.64.094301

JO - Physical Review B

JF - Physical Review B

SN - 0163-1829

IS - 9

VL - 64

ER -