Fluorescent SiC as a new material for white LEDs

Publication: Research - peer-reviewJournal article – Annual report year: 2012

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Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.
Original languageEnglish
JournalPhysica Scripta
Publication date2012
Volume2012
Journal numberT148
Pages014002
ISSN0031-8949
DOIs
StatePublished

Conference

Conference24th Nordic Semiconductor Meeting
Number24
CountryDenmark
CityAarhus
Period19/06/1122/06/11
CitationsWeb of Science® Times Cited: 8
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