Fluorescent SiC as a new material for white LEDs

Publication: Research - peer-reviewJournal article – Annual report year: 2012

  • Author: Syväjärvi, M.

    Linköping University, Sweden

  • Author: Müller, J.

    Center for Nanoanalysis and Electron Microscopy, University of Erlangen-Nürnberg, Germany

  • Author: Sun, J. W.

    Linköping University, Sweden

  • Author: Grivickas, V.

    Vilnius University, Lithuania

  • Author: Ou, Yiyu

    Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark, Light Extraction ApS Diplomvej 373, 2800, Lyngby, Denmark

  • Author: Jokubavicius, V.

    Linköping University, Sweden

  • Author: Hens, P.

    Linköping University, Sweden

  • Author: Kaisr, M.

    University of Erlangen-Nuremberg, Germany

  • Author: Ariyawong, K.

    Linköping University, Sweden

  • Author: Gulbinas, K.

    Vilnius University, Lithuania

  • Author: Hens, P.

    Linköping University, Sweden

  • Author: Liljedahl, R.

    Linköping University, Sweden

  • Author: Linnarsson, M. K.

    Royal Institute of Technology, Sweden

  • Author: Kamiyama, S.

    Meijo University, Japan

  • Author: Wellmann, P.

    University of Erlangen-Nuremberg, Germany

  • Author: Spiecker, E.

    Center for Nanoanalysis and Electron Microscopy, University of Erlangen-Nürnberg, Germany

  • Author: Ou, Haiyan

    Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark, Ørsteds Plads, 2800, Kgs. Lyngby, Denmark

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Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.
Original languageEnglish
JournalPhysica Scripta
Publication date2012
Volume2012
IssueT148
Pages014002
ISSN0031-8949
DOIs
StatePublished

Conference

Conference24th Nordic Semiconductor Meeting
Number24
CountryDenmark
CityAarhus
Period19/06/1122/06/11
CitationsWeb of Science® Times Cited: 14
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